| 摘要 |
A spin transistor ( 10 ) comprises a spin injector ( 50 ) formed of a ferromagnetic material and constituting the emitter ( 20 ) of a three-terminal device, a spin filter ( 70 ) also formed of a ferromagnetic material and constituting a collector ( 40 ), and a semiconductor base ( 30 ) region. A tunnelling barrier ( 60 ) is formed of an insulating metal oxide such as aluminium oxide between the emitter ( 20 ) and the base ( 30 ). The tunnelling barrier ( 60 ) reduces the degree of spin depolarization as carriers are injected into the base ( 30 ), and permits selection of spin injection energy. In preferred embodiments, a second tunnelling barrier ( 80 ) may be formed between the base ( 30 ) and the collector ( 40 ). A method of manufacture is also provided.
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