发明名称 Method for rapidly heating and cooling semiconductor wafers
摘要 The present invention is directed to an apparatus and process for heating and cooling semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a cooling device for actively cooling the wafers after the wafers have been heated. During use, the cooling device can be movable towards and away from a wafer placed in the chamber for selectively cooling the wafer at desired times. In an alternative embodiment, a gas can be directed towards the wafer for rapidly reducing the temperature of the wafer at the completion of the process. Alternatively, the wafer can be lowered to close proximity of a cooling member to achieve active and selective cooling.
申请公布号 US6919271(B2) 申请公布日期 2005.07.19
申请号 US20030646144 申请日期 2003.08.22
申请人 MATTSON TECHNOLOGY, INC. 发明人 GAT ARNON
分类号 H01L21/31;H01L21/00;H01L21/26;(IPC1-7):H01L21/44 主分类号 H01L21/31
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