Semiconductor device and semiconductor memory device

摘要

A semiconductor memory device according to the present invention includes: a plurality of N-ch MOS transistors arranged in an area surrounding a plurality of memory cells arranged in an array, at a spacing depending on a spacing of the plurality of memory cells, for driving the plurality of memory cells; and a plurality of dummy transistors 32 -j each of which is formed between two adjacent ones of the plurality of N-ch MOS transistors 30 -k so as to share diffusion layers with adjacent N-ch MOS transistors 30 and each of which has a gate electrode supplied with a voltage for electrically insulating these adjacent transistors 30 -k.