| 发明名称 |
Short channel trench MOSFET with reduced gate charge |
| 摘要 |
A trench-type MOSgated device including high conductivity regions formed at the bottom of its trenches and field relief regions at or below the bottom of its channel region.
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| 申请公布号 |
US6919599(B2) |
申请公布日期 |
2005.07.19 |
| 申请号 |
US20030603461 |
申请日期 |
2003.06.25 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
HENSON TIMOTHY |
| 分类号 |
H01L29/06;H01L29/08;H01L29/10;H01L29/78;(IPC1-7):H01L29/772 |
主分类号 |
H01L29/06 |
| 代理机构 |
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代理人 |
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| 地址 |
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