发明名称 Dose monitoring method and manufacturing method of semiconductor device
摘要 There is disclosed a dose monitor method comprising illuminating a mask with illumination light, which is disposed in a projection exposure apparatus and in which a dose monitor pattern is formed, passing only a 0th-order diffracted light through a pupil surface of the projection exposure apparatus in diffracted lights of the dose monitor pattern, and transferring a 0th-order diffracted light image of the dose monitor pattern onto a substrate to measure dose, wherein during the illuminating, a center of gravity of the 0th-order diffracted light image passed through the dose monitor pattern on the pupil surface of the projection exposure apparatus is shifted from an optical axis of the projection exposure apparatus.
申请公布号 US6919153(B2) 申请公布日期 2005.07.19
申请号 US20030611247 申请日期 2003.07.02
申请人 KABUSHIKI KAISAHA TOSHIBA 发明人 FUJISAWA TADAHITO;INOUE SOICHI;SATO TAKASHI;ASANO MASAFUMI
分类号 H01L21/027;G03F7/20;G03F7/207;(IPC1-7):G03C5/00;G03F9/00 主分类号 H01L21/027
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