发明名称 |
Dose monitoring method and manufacturing method of semiconductor device |
摘要 |
There is disclosed a dose monitor method comprising illuminating a mask with illumination light, which is disposed in a projection exposure apparatus and in which a dose monitor pattern is formed, passing only a 0th-order diffracted light through a pupil surface of the projection exposure apparatus in diffracted lights of the dose monitor pattern, and transferring a 0th-order diffracted light image of the dose monitor pattern onto a substrate to measure dose, wherein during the illuminating, a center of gravity of the 0th-order diffracted light image passed through the dose monitor pattern on the pupil surface of the projection exposure apparatus is shifted from an optical axis of the projection exposure apparatus.
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申请公布号 |
US6919153(B2) |
申请公布日期 |
2005.07.19 |
申请号 |
US20030611247 |
申请日期 |
2003.07.02 |
申请人 |
KABUSHIKI KAISAHA TOSHIBA |
发明人 |
FUJISAWA TADAHITO;INOUE SOICHI;SATO TAKASHI;ASANO MASAFUMI |
分类号 |
H01L21/027;G03F7/20;G03F7/207;(IPC1-7):G03C5/00;G03F9/00 |
主分类号 |
H01L21/027 |
代理机构 |
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主权项 |
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地址 |
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