| 发明名称 |
Multiple-gate MOS device and method for making the same |
| 摘要 |
A method for forming a semiconductor device with more than two gates involves the forming of a stack of n-conductive gate electrodes, where n>2. Silicon is formed around the gate stack and the silicon is doped to form source/drain regions. The multiple gates maximize the drive current for a given silicon area.
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| 申请公布号 |
US6919250(B2) |
申请公布日期 |
2005.07.19 |
| 申请号 |
US20030442131 |
申请日期 |
2003.05.21 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRIVOKAPIC ZORAN |
| 分类号 |
H01L21/3205;H01L21/336;H01L21/4763;H01L29/51;H01L29/78;(IPC1-7):H01L21/336;H01L21/320 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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