| 摘要 |
<p>A multiple-layer serial diode cell and a nonvolatile memory device using the same enable reduction in the number of cell arrays by configuring cell arrays including a nonvolatile ferroelectric capacitor and a serial diode cell as multiple layers. In the nonvolatile memory device, a unit serial diode cell comprising a nonvolatile ferroelectric capacitor and a serial diode switch which does not require an additional gate control signal is positioned between a word line and a bit line, thereby embodying a cross point cell array, which is configured as a multiple layer to reduce the whole chip size.</p> |
