| 摘要 |
<p>In a manufacturing method of a nonvolatile semiconductor memory device including a variable resistive element having a variable resistor (8) made of a perovskite-type metal oxide film, the variable resistor (8) is formed at a temperature which is lower than the melting point of a metal wire layer (11) that has been formed before formation of the variable resistor (8). More preferably, the variable resistor (8) is formed by a praseodymium calcium manganese oxide, which is represented by a general formula, Pr 1-x Ca x MnO 3 , carried out at a film forming temperature in a range from 350°C to 500°C according to a sputtering method.</p> |
