ZN SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A preliminary buffer layer (2') is formed on a major surface of a substrate (1) as a polycrystalline layer or an amorphous layer. The preliminary buffer layer (2') is constituted of an In compound or a Zn compound which is not included in the substrate (1). Before forming a light-emitting region, the preliminary buffer layer (2') is subjected to a heat treatment for recrystallization so as to be formed into a buffer layer (2). With this method, a Zn semiconductor light-emitting device can be produced easily and the quality of the light- emitting region can be improved.