发明名称 PROCEDE POUR MODIFIER LES PROPRIETES D'UNE COUCHE MINCE ET SUBSTRAT FAISANT APPLICATION DU PROCEDE
摘要 <p>The thin layer is formed in the surface of a support making up a substrate utilized in micro-, nano-electronics and micro-, nano-technology, and consists of forming at least one thin layer on the nano-structured support with a specific upper surface, and processing the nano-structured support for generating internal strains in the support by its deformation in at least the plane of the thin layer in a manner to ensure a corresponding deformation of the thin layer for modifying its properties. The method (claimed) consists in processing the nano-structured support with specific upper surface by chemical means in order to ensure a deformation corresponding to an expansion or a contraction of its nano-structure. The nano-structured support is chosen from among different nano-structures on the basis of metals, semiconductors and dielectric materials, such as porous silicon, nano-structured semiconductors of type IV, IV-IV, III-V, II-VI, and nano-structured dielectric materials on the basis of titanium dioxide, aluminium oxide, zinc oxide, etc. The method includes, after the processing of the nano-structured support, the epitaxial growth of a crystalline material on the thin layer. The thin layer is chosen which can possess, after the procesing of the nano-structure, the lattice parameter corresponding to that of the crystalline material designed to be formed by the epitaxial growth on the thin layer. The thin layer is chosen which can possess, after the processing of the nano-structure, the lattice parameter corresponding to that of the crystalline material designed to be formed by the epitaxial growth on the thin layer. The thin layer can be pre-strained or not. In a variant of the method, at least one intermediate layer is formed between the thin layer and the nano-structured support. The thin layer possessing piezoelectric properties can be formed on the nano-structured support, by an operation of lithography to obtain the piezoelectric zones, or by a deformation of the nano-structured support so to cause the appearance of electric charges at the level of the thin layer. A substrate (claimed) for micro-, nano-electronics or micro-, nano-technology is formed by the method and comprises the thin layer deformed in correspondence with the support, and the epitaxial laeyr of semiconducting or superconducting material formed on the thin layer, or the thin layer formed of piezoelectric material. Applications (claimed) of the substrate are in the implementation of an optoelectronic element or an electronic component.</p>
申请公布号 FR2839505(B1) 申请公布日期 2005.07.15
申请号 FR20020005731 申请日期 2002.05.07
申请人 UNIVERSITE CLAUDE BERNARD LYON I 发明人 MARTY OLIVIER;LYSENKO VOLODYMYR
分类号 B05D3/00;B32B15/00;B81C1/00;B82B3/00;C30B25/02;H01L21/20;H01L21/205;H01L39/24;H01L41/22;H01L41/332;(IPC1-7):B81C1/00 主分类号 B05D3/00
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