| 摘要 |
A method of fabricating a semiconductor device is provided, by which oxide on a Cu surface after via-etch can be removed using Hf (hafnium) as a barrier material. The method includes the steps of forming a Cu line in at least one protective insulating layer on a substrate, forming a via hole in the protective insulating layer to expose a portion of the Cu line, forming an Hf-containing layer in the via hole to cover the exposed portion of the embedded Cu line, and forming a conductive layer over the Hf-containing layer.
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