| 发明名称 |
Semiconductor device and manufacturing method thereof |
| 摘要 |
A semiconductor device includes a substrate, a pad electrode formed on the substrate and a bump electrode formed on the pad electrode, wherein the pad electrode has an irregular flaw, and there is provided a pattern covering the irregular flaw between the pad electrode an the bump electrode.
|
| 申请公布号 |
US2005151250(A1) |
申请公布日期 |
2005.07.14 |
| 申请号 |
US20040998182 |
申请日期 |
2004.11.29 |
| 申请人 |
CHIBA SHUICHI;ISHIGURI MASAHIKO;MURATA KOICHI;WATANABE EIJI;TAMAGAWA MICHIAKI;SATOH AKIRA;TOIDA YASUSHI;MISAWA KAZUHIRO |
发明人 |
CHIBA SHUICHI;ISHIGURI MASAHIKO;MURATA KOICHI;WATANABE EIJI;TAMAGAWA MICHIAKI;SATOH AKIRA;TOIDA YASUSHI;MISAWA KAZUHIRO |
| 分类号 |
H01L21/288;H01L21/60;H01L23/00;H01L23/485;H01L23/544;H01L29/40;H01L29/78;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/288 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
