发明名称 |
Bias-adjusted magnetoresistive devices for magnetic random access memory (MRAM) applications |
摘要 |
A method and apparatus are presented for shifting a hysteresis loop of a magnetoresistive device. For example, a method provides for applying a bias current to a word line of the magnetoresistive device during either a read sequence or a write sequence. The bias current is preferably configured to substantially center a hysteresis loop of the device without switching a binary state of the device.
|
申请公布号 |
US2005152179(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20040754935 |
申请日期 |
2004.01.10 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
KATTI ROMNEY R. |
分类号 |
G11C11/16;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|