METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT WITH A PRASEODYMIUM OXIDE DIELECTRIC

摘要

The invention relates to a semiconductor component and a method for the production thereof. The inventive component comprises a silicium-containing layer, a praseodymium-containing layer and a mixed silicium and praseodymium oxide layer which contains oxygen and disposed between said silicium- and praseodymium-containing layers. The mixed oxide layer makes it possible to improve the component capacitance and to obtain a high charge carrier mobility in such a way than it is not necessary to use an intermediate silicium oxide layer.