发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A semiconductor device includes a substrate having a first area and a second area adjacent to the first area, a first silicon layer provided on the substrate in the first area, a relaxed layer which is provided on the substrate in the second area and which has a lattice constant greater than a lattice constant of the first silicon layer, and a strained-Si layer which is provided on the relaxed layer and which has a lattice constant substantially equivalent to the lattice constant of the relaxed layer. |
申请公布号 |
US2005151163(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20050026542 |
申请日期 |
2005.01.03 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIYAMA KAORU;SANUKI TOMOYA;FUJII OSAMU |
分类号 |
H01L21/822;H01L21/8234;H01L21/8238;H01L21/8239;H01L21/8242;H01L27/04;H01L27/06;H01L27/08;H01L27/088;H01L27/092;H01L27/105;H01L27/108;H01L29/786;H01L29/92;(IPC1-7):H01L29/10 |
主分类号 |
H01L21/822 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|