| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can pattern a lower layer resist film using a multilayer resist process without damaging an underground structure, and can process a fine pattern with good controllability using the lower layer resist film. SOLUTION: The method comprises the steps of forming a dielectric 14 having a opening 18, forming an organic resist film 20a, forming a mask film 20b having a etching characteristic different from that of the organic resist film 20a on the organic resist film 20a, forming an opening on the mask film 20b, and etching the organic resist film 20a with the mask film 20b as a mask. In the step of etching the organic resist film, a mixed gas including a nitride gas and an oxygen gas is used to etch the organic resist film 20a. COPYRIGHT: (C)2005,JPO&NCIPI
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