发明名称 METHOD FOR FORMING METAL THIN FILM AND SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide substrate processing apparatus capable of forming a uniform metal thin film on a substrate. SOLUTION: Around a carrier section 1 comprising a carry robot 10, a coater section 2 for applying an organic substance including metal to a wafer W, a bake section 3 for drying the wafer W by carrying out a first heat treatment, a heat treatment section 4 for carrying out a second heat treatment to the wafer W, a plating process section 5 for carrying out a plating process to the wafer W, and a loader/unloader section 6 for placing a cassette CA storing untreated and treated wafers W are arranged. The carrier section 1 carries the wafer W between each of the process sections including the loader/unloader section 6 and process and heat treatment for forming a metal layer on the wafer W are carried out. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005191580(A) 申请公布日期 2005.07.14
申请号 JP20050001735 申请日期 2005.01.06
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 SAKAI TAKAMASA;HIRAE SADAO
分类号 B05D1/40;B05C9/14;B05C11/08;B05D3/12;H01L21/288;H01L21/768;(IPC1-7):H01L21/288 主分类号 B05D1/40
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