| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device with an element on which a silicide layer is formed and an element on which no silicide layer is formed on an identical semiconductor layer. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of sequentially forming a gate insulating layer 30 and a gate electrode 32 over a semiconductor layer 10 (a), introducing an impurity 40a in a source and drain forming region of a first transistor and a source and drain forming region of a second transistor (b), forming a first protective layer all over the semiconductor layer 10 (c), forming a source and drain 40 of the first transistor 100A and a source and drain 40 of the second transistor 100B by diffusing the impurity 40a (d), forming a second protective layer 52 by patterning the first protective layer so as to cover at least the second transistor region 100B (e), and forming a silicide layer 60 in the region not covered by the second protective layer 52 (f). COPYRIGHT: (C)2005,JPO&NCIPI
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