发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To form a metal film or a metal compound film while securing a high adhesion property on a porous insulating film. SOLUTION: The porous insulating film is formed on a substrate, and the metal film or the metal compound film is formed on the insulating film. In this case, conditions of the film formation of the metal film or the like are changed, and a diffusion layer in which metal or a metal compound included in the metal film or the metal compound film is diffused to the insulating film is formed between the metal film or the metal compound, and the insulating film. The diffusion layer increases the adhesion property between the metal film and the porous insulating film. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005191291(A) 申请公布日期 2005.07.14
申请号 JP20030430935 申请日期 2003.12.25
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 OTSUKA NOBUYUKI;OGAWA SHINICHI;OKAMURA HIROSHI
分类号 H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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