| 摘要 |
PROBLEM TO BE SOLVED: To control a leak current of a diffusing resistance layer as much as possible in a method of manufacturing semiconductor providing a MOS transistor and a diffusing resistance layer on the same semiconducor substrate. SOLUTION: The method of manufacturing semiconductor device is characterized in that a CVD insulating film 23 is formed on the entire surface of an n-type well 11 including a gate electrode 22 and p<SP>+</SP>-type diffusing resistance layer 30 formed on the n-type well 11. A second photoresist layer 42 having an aperture 42m is formed on a part of the diffusing resistance layer 30 and the CVD insulating film 23 is subjected to an unisotropic etching process using the second photoresist 42 as a mask, and thereby a side wall spacer 23s is formed to the side wall of the gate electrode 22. Moreover, a high concentration p-type impurity is doped using the second photoresist layer 42 as the mask to form a source layer 24s and a drain layer 24d of the MOS transistor 20, and a p<SP>+</SP>-type layer 31 for the formation of contact of the diffusing resistance layer 30. COPYRIGHT: (C)2005,JPO&NCIPI
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