发明名称 Hardened nano-imprinting stamp
摘要 A hardened nano-imprinting stamp and a method of forming a hardened nano-imprinting stamp are disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp are improved.
申请公布号 US2005150404(A1) 申请公布日期 2005.07.14
申请号 US20050065171 申请日期 2005.02.23
申请人 LEE HEON;JUNG GUN-YOUNG 发明人 LEE HEON;JUNG GUN-YOUNG
分类号 B82B3/00;B81C1/00;G03F7/00;H01L21/027;(IPC1-7):B41K1/42 主分类号 B82B3/00
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