| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an economical manufacturing method which can improve use efficiency of a silicon ingot, and a photoelectric converter having high electrical property wherein impact of dopant like Fe is decreased by the method. <P>SOLUTION: The photoelectric converter which is constituted by using a B doped p-type crystal silicon substrate is constituted of a bulk substrate region which is an optical active region, and the other portion except the bulk substrate region. When the bulk substrate region is taken out independently and minority carrier diffusion length is measured from an optical incidence plane side, 0.5<(L1/Lpeak) is established (where, L1: minority carrier diffusion length in an arbitrary position of the optical incidence plane side of the bulk substrate region portion, and Lpeak: central value of a section where the maximum peak of a high diffusion length side of histogram exists, when the minority carrier diffusion length is measured over whole surface and all data are made histograms for every 10μm section). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
