| 摘要 |
PROBLEM TO BE SOLVED: To improve image quality by enhancing characteristics of a transistor which is formed adjacently to a photo-electric transducer, by avoiding the influence of a crystal defect which occurs on the interface of the drain region of the transistor. SOLUTION: A drain region 8 of a modulation transistor TM in which a threshold voltage of a channel between a source region 7 and the drain region 8 is controlled by a light generation charge held by a modulation well 5, and which outputs a pixel signal corresponding to the light generation charge, is formed of a high-concentration n<SP>+</SP>-layer 8a surrounding a collection well 4 and the modulation well 5, and an N<SP>-</SP>-layer which becomes a diffusion layer of a lower concentration than that of the n<SP>+</SP>-layer, while overlaying the n<SP>+</SP>-layer 8a around a ring gate 6, thereby avoiding the influences of a crystal defect in the drain region 8. COPYRIGHT: (C)2005,JPO&NCIPI
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