| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which realizes a power IC to be driven by large current with a small occupying area, and also to provide a method of manufacturing the same. SOLUTION: In the semiconductor device, one inverter circuit includes a first transistor element (VT) of vertical structure device and a second transistor element (LT) of lateral structure device. In the vertical structure, one of a source electrode and a drain electrode is disposed on the rear surface of a semiconductor chip, and its drift layer is a semiconductor body region. As compared with the lateral structure device, the planar layout area of the inverter power IC is reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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