发明名称 |
On-chip structure for electrostatic discharge (ESD) protection |
摘要 |
A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (P-HHLVTSCR) device. The regions of the N-HHLVTSCR and P-HHLVTSCR devices are formed during normal processing steps in a CMOS or BICMOS process. The spacing and dimensions of the doped regions of N-HHLVTSCR and P-HHLVTSCR devices are used to produce the desired characteristics. The tunable HHLVTSCRs makes possible the use of this protection circuit in a broad range of ESD applications including protecting integrated circuits where the I/O signal swing can be either within the range of the bias of the internal circuit or below/above the range of the bias of the internal circuit.
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申请公布号 |
US2005151160(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20050032154 |
申请日期 |
2005.01.11 |
申请人 |
THE UNIVERSITY OF CENTRAL FLORIDA |
发明人 |
SALCEDO JAVIER A.;LIOU JUIN J.;BERNIER JOSEPH C.;WHITNEY DONALD K.JR. |
分类号 |
H01L27/02;H01L29/72;(IPC1-7):H01L29/72 |
主分类号 |
H01L27/02 |
代理机构 |
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地址 |
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