发明名称 |
Photoresist pattern, method of fabricating the same, and method of assuring the quality thereof |
摘要 |
A photoresist pattern and a method of fabricating the same make it easy to quickly identify a particular portion of a photolithography process that is responsible for causing process defects. The method of fabricating the photoresist pattern includes forming main patterns having a predetermined critical dimension in device-forming regions of a semiconductor substrate, and forming a plurality of test patterns in scribe regions of the substrate. The scribe regions are defined alongside the device-forming regions and separate the device-forming regions from one another. The test patterns have shapes similar to that of the main patterns. Also, one of the test patterns has a critical dimensions similar to that of the main patterns, and other test patterns have respective critical dimensions that are different from the critical dimension of the main patterns.
|
申请公布号 |
US2005153466(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20050026100 |
申请日期 |
2005.01.03 |
申请人 |
CHOI YEON-DONG;BAEK KYOUNG-YUN |
发明人 |
CHOI YEON-DONG;BAEK KYOUNG-YUN |
分类号 |
H01L21/027;G03F1/14;G03F7/20;H01L21/66;H01L23/544;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|