MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging device of high charge transfer efficiency by improving roughness of a surface caused by a chemomechanical polishing (CMP) process and preventing local thinning or disconnection of a pattern of an electrode or wiring. SOLUTION: The manufacturing method of the solid-state imaging device comprises a process for forming a gate oxide film and a pattern of a first layer conductive film one by one on the surface of a first conductivity type semiconductor layer constituting a semiconductor substrate surface, a process for forming a side wall insulating film to cover a side wall of a pattern of the first layer conductive film, a process for forming a second layer conductive film comprising an amorphous silicon layer on an upper layer thereof, a process for forming a charge transfer electrode of a single layer structure wherein the second layer conductive film is arranged between patterns of the first layer conductive film covered with the side wall insulating film by etching the second layer conductive film by a CMP method until the pattern of the first layer conductive film is exposed. The manufacturing method comprises a process for forming a polycrystalline silicon layer by annealing the amorphous silicon layer before the etching. COPYRIGHT: (C)2005,JPO&NCIPI