| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having C-V characteristic which is equivalent to ideal C-V characteristic by controlling the metal concentration in a metal silicate film provided to the uppermost layer of a high dielectric constant film. SOLUTION: In the semiconductor device formed by forming a gate electrode 7b through a gate insulating film on a silicon substrate 1, the gate insulating film is constituted by laminating a silicon oxide film 4a formed on the silicon substrate 1, an Hf silicate film 5a formed on the silicon oxide film 4a, and a nitrogen containing Hf silicate film 6a which is formed on the Hf silicate film 5a and contains Hf at a peak concentration of 1 atomic% or more and 30 atomic% or less and contains nitrogen at a peak concentration of 10 atomic% or more and 30 atomic% or less. COPYRIGHT: (C)2005,JPO&NCIPI
|
