发明名称 |
Novel shallow trench isolation method for reducing oxide thickness variations at different pattern densities |
摘要 |
A method of reducing oxide thickness variations in a STI pattern that includes both a dense trench array and a wide trench is described. A first HDP CVD step with a deposition/sputter (D/S) ratio of 9.5 is used to deposit a dielectric layer with a thickness that is 120 to 130% of the shallow trench depth. An etch back is performed in the same CVD chamber with NF<SUB>3</SUB>, SiF<SUB>4 </SUB>or NF<SUB>3 </SUB>and SiF<SUB>4 </SUB>to remove about 40 to 50% of the initial dielectric layer. A second HDP CVD step with a D/S ratio of 16 deposits an additional thickness of dielectric layer to a level that is slightly higher than after the first deposition. The etch back and second deposition form a smoother dielectric layer surface which enables a subsequent planarization step to provide filled STI features with a minimal amount of dishing in wide trenches.
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申请公布号 |
US2005153519(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20040753816 |
申请日期 |
2004.01.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
LU CHIH-CHENG;HOU CHUAN-PING;FU CHU-YUN;WEN CHANG;MING JANG S. |
分类号 |
H01L21/3105;H01L21/311;H01L21/316;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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