发明名称 |
Method of manufacturing dielectric layer in non-volatile memory cell |
摘要 |
A method for manufacturing a dielectric layer structure for a non-volatile memory cell is provided. A method includes forming a first dielectric layer for tunneling on a semiconductor substrate, a second dielectric layer on the first dielectric layer to store charges, nitrogenizing surface of the second dielectric layer, and forming a third dielectric layer the nitridedsecond dielectric layer.
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申请公布号 |
US2005153514(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20050033156 |
申请日期 |
2005.01.12 |
申请人 |
LEE JAI-DONG;KIM KI-CHUL;CHO IN-WOOK |
发明人 |
LEE JAI-DONG;KIM KI-CHUL;CHO IN-WOOK |
分类号 |
H01L27/115;H01L21/314;H01L21/336;H01L21/8246;(IPC1-7):H01L21/336;H01L21/320;H01L21/31 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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