| 发明名称 |
Bridge field effect transistor memory cell has charge storage layer designed for selective charge carrier introduction or removal by application of given electrical potential |
| 摘要 |
<p>The charge storage layer is designed such that electrical charge carriers can be introduced into or removed from it, selectively, by applying a given electrical potential to the bridge field effect transistor memory cell. An independent claim is included for the method of manufacture.</p> |
| 申请公布号 |
DE10359889(A1) |
申请公布日期 |
2005.07.14 |
| 申请号 |
DE2003159889 |
申请日期 |
2003.12.19 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SPECHT, MICHAEL;KREUPL, FRANZ;STEINLESBERGER, GERNOT;KRETZ, JOHANNES |
| 分类号 |
H01L21/336;H01L21/8246;H01L21/8247;H01L21/84;H01L27/115;H01L27/12;H01L29/786;H01L29/792;(IPC1-7):H01L27/115;H01L21/824 |
主分类号 |
H01L21/336 |
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