| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of inhibiting a thermal conduction in the in-face direction of a substrate. <P>SOLUTION: The semiconductor device 100 has the conductive substrate 10, an insulating layer 20, a conductive layer 30, electrical connecting layers 40 and 60, a drive circuit 50, a power element 70, a wire 80, and a cooling member 90. The conductive substrate 10 is composed of conductive members 11 and 12, an insulating member 13, and the insulating layer 14. The conductive members 11 and 12 are connected through the insulating member 13. The insulating layer 20 is inserted into the conductive member 11. The conductive layer 30, the electrical connecting layer 40, and the drive circuit 50 are arranged on the conductive member 11. The electrical connecting layers 60 and the power element 70 are arranged on the conductive member 12 so that an angleθformed with one main surface 14A of the insulating layer 14 of a line LN1 is formed at 45°. The wire 80 electrically connects the power element 70 to the conductive layer 30. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
