发明名称 |
METHOD FOR HEAT TREATMENT OF FERROELECTRIC FILM, CAPACITY ELEMENT AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for heat treatment of a ferroelectric film by which the generation of oxygen omission in the ferroelectric film is suppressed. SOLUTION: The method for the heat treatment of the ferroelectric film comprises processes for performing: first heat treatment for preventing oxygen in the ferroelectric film from being diffused to the outside of the ferroelectric film, and second heat treatment for crystallizing the ferroelectric film after the process for performing the first heat treatment. In the process for performing the first heat treatment, it is preferable to perform the heat treatment under an atmosphere that ozone concentration is≥0.7% and≤2.0% and a condition that temperature is≥450°C and≤550°C. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005191358(A) |
申请公布日期 |
2005.07.14 |
申请号 |
JP20030432352 |
申请日期 |
2003.12.26 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TATSUNARI TOSHITAKA |
分类号 |
H01L21/316;H01L21/8246;H01L27/105;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/316 |
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