| 摘要 |
PROBLEM TO BE SOLVED: To reduce errors between actually measured values of element characteristics of a high-breakdown voltage MOS transistor having a low-concentration impurity area between a channel area and a drain electrode, and simulation values. SOLUTION: An element model of a high-breakdown voltage MOS transistor (1) having a low-concentration impurity area (5) between a channel area (2) and a drain electrode (4) is defined by combining a plurality of element models. Fundamental characteristics are represented by a standard MOS model (MMAIN). A conductivity modulation effect of a low-concentration drain diffusion layer is represented by a variable resistance model (RDD) which has a value varied by a drain voltage and a gate voltage. A gate-drain overlap capacity is represented by a MOS capacity (MCAP) between gate-bulks. The variable resistance model compensates the variance of a voltage in a channel end part adjacent to the low-concentration diffusion layer, which is caused by an influence of not only the gate voltage but also the drain voltage. COPYRIGHT: (C)2005,JPO&NCIPI
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