| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas-phase growth apparatus capable of carrying out stable film growth by stabilizing the material-gas flow on a wafer surface, wherein the gas flow stabilization is achieved by keeping the gap between a tray on which the wafer is held and a hole formed in the reaction tube uniform through highly precise position alignment between the tray and the hole in the reaction tube. SOLUTION: The gas-phase growth apparatus comprises a tray 11 that loads a wafer 1 on its lower end, an upper surface plate 22 in which a hole 23, into which the lower end of the tray 11 is inserted, is formed, a reaction tube 21, inside of which the reaction gas flows in a horizontal direction, a susceptor 31 that holds the tray 11 and is rotatable, a heating device 41 that heats the wafer loaded on the tray 11, a first tray receiver 51 that transports the tray 11 up to an upper part of the hole 23, and a second tray receiver 61 that transports the tray 11 in the vertical direction. COPYRIGHT: (C)2005,JPO&NCIPI
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