| 摘要 |
PROBLEM TO BE SOLVED: To remove a spacer without varying a contact area of an n-type emitter electrode, and to suppress an effective film thickness variation of an n-type polycrystal silicon of the second layer. SOLUTION: An n-type embedded collector later 2 and a p-type embedded isolated layer 3 are formed in a p-type silicon substrate 1, and an n-type epitaxial collector layer 4 is grown. After an element isolation oxide film 5 is formed and an additive-free polycrystal silicon film is formed, a p-type impurity is doped to form p-type polycrystal silicon. After a TEOS film 6 is grown, the TEOS film 6 and the p-type polycrystal silicon are anisotropically dry-etched by a resist mask to form a p-type external base electrode 7. After thermal oxidation, the p-type impurity is doped to grow a nitride film 8 and the TEOS film 6, and a contact of the nitride film 8 and a TEOS spacer 16 are simultaneously formed by the anisotropically dry-etching. The TEOS spacer 16 is wet-etched with a fluoric acid. The TEOS spacer 16 is removed with the fluoric acid, and the effective film thickness variation of the n-type emitter electrode 12 of the second layer is suppressed. COPYRIGHT: (C)2005,JPO&NCIPI
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