| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which has long lifetime characteristics and enhances the yield, and to provide a method of manufacturing the semiconductor laser element. SOLUTION: In the semiconductor laser element having two cleavage planes 70 forming an end surface of a resonator, there are provided a GaN substrate 1, a low-temperature growth buffer layer 2 formed on the substrate 1, and a growth layer 3 formed on the low-temperature growth buffer layer 2 in which a ridge portion 4 and plural grooves 7 are formed on the surface thereof. The ridge portion 4 is formed in a region 3b, having a low threading dislocation density of the growth layer 3. The grooves 7 are constituted so as to be formed in a region 3a, having a high threading dislocation density, other than the ridge portion 4 of the growth layer 3 so as to continue from one cleavage plane 70 to another cleavage plane 70. COPYRIGHT: (C)2005,JPO&NCIPI
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