| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for forming a metallic film of high quality at a low temperature and simplifying a reaction material used for forming the metallic film, and to provide a method for forming the metallic film therefor. SOLUTION: This film-forming method comprises generating unstable low-valency titanium chloride of a precursor 15 and chlorine radicals, by supplying an electric power to a plasma antenna 27 concurrently with introducing titanium tetrachloride gas 18 into an evacuated chamber 1, then making a substrate 3 adsorb the precursor 15 by adjusting a temperature controlling means 6, and reducing the precursor 15 adsorbed onto the substrate with the chlorine radicals. COPYRIGHT: (C)2005,JPO&NCIPI
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