发明名称 POROGEN MATERIAL
摘要 <p>A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.</p>
申请公布号 WO2004049398(B1) 申请公布日期 2005.07.14
申请号 WO2003US37171 申请日期 2003.11.19
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 XU, CHONGYING;BOROVIK, ALEXANDER, S.;BAUM, THOMAS, H.
分类号 H01L21/316;(IPC1-7):H01L21/31;H01L21/469;B32B5/16 主分类号 H01L21/316
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