<p>A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.</p>
申请公布号
WO2004049398(B1)
申请公布日期
2005.07.14
申请号
WO2003US37171
申请日期
2003.11.19
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.
发明人
XU, CHONGYING;BOROVIK, ALEXANDER, S.;BAUM, THOMAS, H.