| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode with a high luminance, which finds out a bonding layer having a high adhesive strength and an excellent thermal resistance also in a joining condition with a temperature of 500 °C or less, and reduces a stress generated at the time of joining, and can be stably manufactured, and to provide a method of manufacturing the light emitting diode. <P>SOLUTION: There are included a compound semiconductor layer containing an emission member, and an alkali glass substrate which contains any one element of 1 % or more of Na, Ca, Ba or K and is transparent to a luminescence wavelength of the emission member. The alkali glass substrate is constituted to be fixed or joined in contact with the compound semiconductor layer. The method of manufacturing the light emitting diode comprises the steps of: growing up the compound semiconductor layer on an opaque semiconductor substrate to the luminescence wavelength; joining the compound semiconductor layer and the transparent alkali glass substrate by an anode joining method; removing the semiconductor substrate; forming a primary electrode at a part of a principal plane opposite to an anode joining surface; forming a secondary ohmic electrode at other portions; and covering the primary electrode and the compound semiconductor layer having a first polarity with a metal reflective layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
