| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device of low cost which enables high-speed writing and uses an inversion layer as wiring, and to provide its operation method. <P>SOLUTION: The semiconductor memory device has a reference electrode structure between a source region and a drain region in parallel with the regions and at a position with no overlap, to the source region and the drain region, formed in parallel with each other. The device is constituted so that the reference electrode is used as the reference electrode of a hot electron implanted at a source side, when writing, while the inversion layer, formed under the reference electrode, is used as the source region or the drain region, when reading. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
