| 摘要 |
PROBLEM TO BE SOLVED: To overcome the problem that a silicon nitride film obtained by a low pressure CVD method, which is generally used as a passivation film for a semiconductor device, has variations of about 10% of film thickness, so that reflectance greatly varies or refractive index of liquid crystal fluctuates due to the variations in thickness of the passivation film when used in a reflective liquid crystal panel. SOLUTION: A substrate for liquid crystal panel is configured such that a reflecting electrode (14) is formed in matrix on a substrate (1), and also transistors are formed in correspondence with each reflecting electrode, respectively, so that voltages are applied to the reflecting electrode through the transistors. The film thickness is set to a suitable value depending on the wavelength of incident light by using a silicon oxide film of 500-2,000Åin thickness as the passivation film (17). COPYRIGHT: (C)2005,JPO&NCIPI |
