| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method with which abnormal diffusion of Au over a semiconductor layer can be prevented. SOLUTION: A semiconductor device comprises an electrode 100 which contains a Pt layer and an Au layer, and in which either one of the layers forms a Schottky junction or an ohmic junction with a semiconductor layer. The method of manufacturing the semiconductor device includes a deposition step for depositing Ti, Pt, Au of electrode materials on the semiconductor layer using electron beam deposition process, a removal step for removing layers other than a layer wherein the Schottky junction or ohmic junction is formed with the semiconductor layer from a thin layer 20 containing the Pt layer and the Au layer formed in the electrode end in the deposition step, and an electrode formation step for forming an electrode using lift-off process. COPYRIGHT: (C)2005,JPO&NCIPI
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