| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of processing a semiconductor wafer which can realize plasma dicing with a low cost. SOLUTION: The method of processing the semiconductor wafer 1 of dividing the semiconductor wafer 1 into semiconductor elements includes a step of adhering a sheet-like support member 44 to the rear surface 1b of the semiconductor wafer 1, a step of forming a mask layer 5 on a circuit forming surface 1a, then a step of moving a laser beam 6a along a dicing line, a step of removing the mask layer of a boundary region 5a for partitioning the semiconductor elements from each other by the laser beam, and a step of forming a mask pattern for dicing. The method further includes a step of plasma processing the semiconductor wafer 1 after the mask pattern is formed to remove the boundary region of the semiconductor wafer 1 by plasma etching, and a step of dividing each semiconductor element 1c. Thus, the dicing mask can be formed without performing a complicated processing step with high process cost, and the plasma dicing can be realized with the low cost. COPYRIGHT: (C)2005,JPO&NCIPI |
