发明名称 ELECTROSTATIC CHUCK
摘要 PROBLEM TO BE SOLVED: To provide an electrostatic chuck which can increase the plasma resistance and abrasion resistance without jump up of a held substrate, caused by residual charge and can quickly and uniformly control the in-plane temperature of the front face of the held substrate to a specified temperature or a specified temperature distribution. SOLUTION: An electrostatic chuck 16, which holds a wafer W by using electrostatic force, has multiple protrusions 16C that make contact with the wafer W. The protrusions 16C are made of a ceramic dielectric 16A, which includes alumina crystal grains having an average grain diameter of 1 to 2μm, and comprise faces to make contact with the wafer W, which are formed so as to have a surface roughness of Ra 0.2 to 0.3μm that depends on the grain diameter. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005191561(A) 申请公布日期 2005.07.14
申请号 JP20040351448 申请日期 2004.12.03
申请人 TOKYO ELECTRON LTD 发明人 NISHIMOTO SHINYA;NAKAYAMA HIROYUKI;KIMURA HIDETOSHI
分类号 H01L21/3065;H01L21/68;H01L21/683;H02N13/00;(IPC1-7):H01L21/68;H01L21/306 主分类号 H01L21/3065
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