| 发明名称 |
Method of forming metal wiring in a semiconductor device |
| 摘要 |
A method of forming metal wiring in a semiconductor device is disclosed. The method uses a dual damascene process in which a trench is formed prior to a via-hole.
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| 申请公布号 |
US2005153541(A1) |
申请公布日期 |
2005.07.14 |
| 申请号 |
US20040989668 |
申请日期 |
2004.11.17 |
| 申请人 |
LEE SANG-JIN;LEE KYUNG-TAE;OH BYUNG-JUN |
发明人 |
LEE SANG-JIN;LEE KYUNG-TAE;OH BYUNG-JUN |
| 分类号 |
H01L21/3205;H01L21/4763;H01L21/768;H01L21/8242;H01L23/532;(IPC1-7):H01L21/824;H01L21/476 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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