发明名称 |
Buried collar trench capacitor formed by LOCOS using self starved ALD nitride as an oxidation mask |
摘要 |
A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.
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申请公布号 |
US2005151178(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20030749771 |
申请日期 |
2003.12.30 |
申请人 |
PROMOS TECHNOLOGIES, INC. |
发明人 |
SHYU JAMES;CHEN HSI-CHIEH;CHEN CHUAN-CHI |
分类号 |
H01L21/314;H01L21/318;H01L21/32;H01L21/8242;H01L29/94;(IPC1-7):H01L29/94 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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