发明名称 |
Integrated electronic disconnecting circuits, methods, and systems |
摘要 |
Merged devices for transient blocking. A pass transistor is placed so that its body potential drives the gate of a depletion-mode JFET-type blocking transistor. Thus a transient which appears on an external terminal is very rapidly propagated to shut off the blocking transistor, before large numbers of carriers can be injected. Preferably a shunt device is also used to drop high potentials which may appear at the same time. This connection can be particularly useful in power or data input terminals.
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申请公布号 |
US2005152080(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20040924763 |
申请日期 |
2004.08.23 |
申请人 |
FULTEC SEMICONDUCTOR INC. |
发明人 |
HARRIS RICHARD;LINEWIH HANDOKO |
分类号 |
H01L27/098;H01L29/06;H01L29/08;H01L29/10;H01L29/78;H01L29/808;(IPC1-7):H02H9/00 |
主分类号 |
H01L27/098 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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