发明名称 Integrated electronic disconnecting circuits, methods, and systems
摘要 Merged devices for transient blocking. A pass transistor is placed so that its body potential drives the gate of a depletion-mode JFET-type blocking transistor. Thus a transient which appears on an external terminal is very rapidly propagated to shut off the blocking transistor, before large numbers of carriers can be injected. Preferably a shunt device is also used to drop high potentials which may appear at the same time. This connection can be particularly useful in power or data input terminals.
申请公布号 US2005152080(A1) 申请公布日期 2005.07.14
申请号 US20040924763 申请日期 2004.08.23
申请人 FULTEC SEMICONDUCTOR INC. 发明人 HARRIS RICHARD;LINEWIH HANDOKO
分类号 H01L27/098;H01L29/06;H01L29/08;H01L29/10;H01L29/78;H01L29/808;(IPC1-7):H02H9/00 主分类号 H01L27/098
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