发明名称 |
Method of forming a dielectric layer for a non-volatile memory cell and method of forming a non-volatile memory cell having the dielectric layer |
摘要 |
A method of forming a dielectric layer for a non-volatile memory cell is disclosed. According to the method, a dielectric layer is formed by successively forming a lower oxide layer, a nitride layer and an upper oxide layer on a semiconductor substrate. The lower and upper oxide layers are formed using a radical oxidation process. A method of forming a non-volatile memory cell having the dielectric layer is also disclosed.
|
申请公布号 |
US2005153513(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20040992841 |
申请日期 |
2004.11.22 |
申请人 |
LEE WOONG;YOU YOUNG-SUB;LEAM HUN-HYEOUNG;NA KI-SU;KANG MAN-SUG;KIM JUNG-HWAN;LEE JAI-DONG |
发明人 |
LEE WOONG;YOU YOUNG-SUB;LEAM HUN-HYEOUNG;NA KI-SU;KANG MAN-SUG;KIM JUNG-HWAN;LEE JAI-DONG |
分类号 |
H01L21/8247;H01L21/28;H01L21/314;H01L21/316;H01L21/336;H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|