| 发明名称 |
Dielectric layer for semiconductor device and method of manufacturing the same |
| 摘要 |
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
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| 申请公布号 |
US2005151184(A1) |
申请公布日期 |
2005.07.14 |
| 申请号 |
US20040027256 |
申请日期 |
2004.12.30 |
| 申请人 |
LEE JONG-HO;LEE NAE-IN |
发明人 |
LEE JONG-HO;LEE NAE-IN |
| 分类号 |
H01L21/28;H01L29/51;H01L29/788;H01L29/94;(IPC1-7):H01L21/336;H01L29/76;H01L31/062 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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